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dc.contributor.authorChen, J. F.en_US
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorChiang, C. H.en_US
dc.contributor.authorChen, Ross C. C.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorChang, L.en_US
dc.date.accessioned2014-12-08T15:21:34Z-
dc.date.available2014-12-08T15:21:34Z-
dc.date.issued2012-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3675519en_US
dc.identifier.urihttp://hdl.handle.net/11536/15323-
dc.description.abstractA simple critical thickness for generating lattice misfits is insufficient to describe the onset strain relaxation in InAs quantum dots (QDs). A predominant dot family is shown to relieve its strain by In/Ga interdiffusion, rather than by lattice misfits, at the onset of strain relaxation. This argument is based on photoluminescence spectra, which show the emergence of a fine blueshifted transition at the onset of strain relaxation, along with a low-energy transition from a dot family degraded by lattice misfits. From the analysis of the temperature-dependent blueshift and energy separation between the ground and excited-state transitions, the blueshift is attributed to In/Ga interdiffusion. Transmission electron microscopy suggests a relaxation-induced indium migration from the interdiffused dot family to the dislocated dot family. Post-growth thermal annealing can further relieve strain by inducing more In/Ga interdiffusion in the interdiffused dot family and more dislocations in the dislocated dot family. This study explains the co-existence of strong carrier confinement in the QDs and enormous misfit-related traps in the capacitance-voltage spectra, and an elongated QD electron-emission time. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675519]en_US
dc.language.isoen_USen_US
dc.titleHow do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3675519en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume111en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000299127200046-
dc.citation.woscount1-
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