Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package

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DC Field	Value	Language
dc.contributor.author	Yang, Kai-Ming	en_US
dc.contributor.author	Chou, Tzu-Chieh	en_US
dc.contributor.author	Ko, Cheng-Ta	en_US
dc.contributor.author	Lin, Chen-Hao	en_US
dc.contributor.author	Chen, Yu-Hua	en_US
dc.contributor.author	Tseng, Tzyy-Jang	en_US
dc.contributor.author	Wu, Wen-Wei	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.date.accessioned	2019-12-13T01:12:49Z	-
dc.date.available	2019-12-13T01:12:49Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-4-904743-07-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153257	-
dc.description.abstract	In this paper, low temperature (190-220 degrees C) Cu-Cu gang bonding at a low vacuum pressure is demonstrated. The low temperature technologies can be applied to the RDL-first Fan-Out panel level package (FOPLP).	en_US
dc.language.iso	en_US	en_US
dc.title	Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)	en_US
dc.citation.spage	10	en_US
dc.citation.epage	10	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000492018300010	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper