完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Ming-Chien_US
dc.contributor.authorWu, Tsung-Hanen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:21:34Z-
dc.date.available2014-12-08T15:21:34Z-
dc.date.issued2012-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3674322en_US
dc.identifier.urihttp://hdl.handle.net/11536/15326-
dc.description.abstractThe preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO(2)/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO(2) thin film after the memory device is annealed at 600 degrees C in N(2) ambient for 60 s without any chemical reaction between Co and ZrO(2), which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of 1.5 similar to 2.8V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1 similar to-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3674322]en_US
dc.language.isoen_USen_US
dc.titleRobust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanismen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3674322en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume111en_US
dc.citation.issue1en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
顯示於類別:期刊論文