標題: Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
作者: Chang, You-Tai
Li, Pei-Wen
Lin, Horng-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2019
摘要: Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.
URI: http://hdl.handle.net/11536/153323
ISSN: 2161-4636
期刊: 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 123
結束頁: 124
Appears in Collections:Conferences Paper