完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChiu, Yi-Juien_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorLee, Jyh-Weien_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2020-01-02T00:04:19Z-
dc.date.available2020-01-02T00:04:19Z-
dc.date.issued2019-11-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/mi10110752en_US
dc.identifier.urihttp://hdl.handle.net/11536/153370-
dc.description.abstractThe deformation behaviors and fracture features of GaP(100) single-crystal are investigated by using nano- and micro-scale indentation techniques. The hardness and Young's modulus were measured by nanoindentation using a Berkovich diamond indenter with continuous contact stiffness measurements (CSM) mode and the values obtained were 12.5 +/- 1.2 GPa and 152.6 +/- 12.8 GPa, respectively. In addition, the characteristic "pop-in" was observed in the loading portion of load-displacement curve, which was caused by the nucleation and/or propagation of dislocations. An energetic estimation methodology on the associated nanoindentation-induced dislocation numbers resulting from the pop-in events was discussed. Furthermore, the Vickers indentation induced fracture patterns of GaP(100) single-crystal were observed and analyzed using optical microscopy. The obtained fracture toughness K-C of GaP(100) single-crystal was similar to 1.7 +/- 0.1 MPa.m(1/2), which is substantially higher than the K-IC values of 0.8 MPa.m(1/2) and 1.0 MPa.m(1/2) previously reported for of single-crystal and polycrystalline GaP, respectively.en_US
dc.language.isoen_USen_US
dc.subjectGaP(100) single crystalen_US
dc.subjectpop-inen_US
dc.subjectnanoindentationen_US
dc.subjectfractureen_US
dc.titleThe Indentation-Induced Pop-in Phenomenon and Fracture Behaviors of GaP(100) Single-Crystalen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/mi10110752en_US
dc.identifier.journalMICROMACHINESen_US
dc.citation.volume10en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000502255300038en_US
dc.citation.woscount0en_US
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