Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiu, Yi-Jui | en_US |
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Lee, Jyh-Wei | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2020-01-02T00:04:19Z | - |
dc.date.available | 2020-01-02T00:04:19Z | - |
dc.date.issued | 2019-11-01 | en_US |
dc.identifier.uri | http://dx.doi.org/10.3390/mi10110752 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153370 | - |
dc.description.abstract | The deformation behaviors and fracture features of GaP(100) single-crystal are investigated by using nano- and micro-scale indentation techniques. The hardness and Young's modulus were measured by nanoindentation using a Berkovich diamond indenter with continuous contact stiffness measurements (CSM) mode and the values obtained were 12.5 +/- 1.2 GPa and 152.6 +/- 12.8 GPa, respectively. In addition, the characteristic "pop-in" was observed in the loading portion of load-displacement curve, which was caused by the nucleation and/or propagation of dislocations. An energetic estimation methodology on the associated nanoindentation-induced dislocation numbers resulting from the pop-in events was discussed. Furthermore, the Vickers indentation induced fracture patterns of GaP(100) single-crystal were observed and analyzed using optical microscopy. The obtained fracture toughness K-C of GaP(100) single-crystal was similar to 1.7 +/- 0.1 MPa.m(1/2), which is substantially higher than the K-IC values of 0.8 MPa.m(1/2) and 1.0 MPa.m(1/2) previously reported for of single-crystal and polycrystalline GaP, respectively. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaP(100) single crystal | en_US |
dc.subject | pop-in | en_US |
dc.subject | nanoindentation | en_US |
dc.subject | fracture | en_US |
dc.title | The Indentation-Induced Pop-in Phenomenon and Fracture Behaviors of GaP(100) Single-Crystal | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/mi10110752 | en_US |
dc.identifier.journal | MICROMACHINES | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000502255300038 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |