完整後設資料紀錄
DC 欄位語言
dc.contributor.authorVaradhan, Purushothamanen_US
dc.contributor.authorFu, Hui-Chunen_US
dc.contributor.authorKao, Yu-Chengen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorHe, Jr-Hauen_US
dc.date.accessioned2020-01-02T00:04:20Z-
dc.date.available2020-01-02T00:04:20Z-
dc.date.issued2019-11-21en_US
dc.identifier.issn2041-1723en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41467-019-12977-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/153385-
dc.description.abstractDespite III-V semiconductors demonstrating extraordinary solar-to-hydrogen (STH) conversion efficiencies, high cost and poor stability greatly impede their practical implementation in photoelectrochemical (PEC) water splitting applications. Here, we present a simple and efficient strategy for III-V-based photoelectrodes that functionally and spatially decouples the light harvesting component of the device from the electrolysis part that eliminates parasitic light absorption, reduces the cost, and enhances the stability without any compromise in efficiency. The monolithically integrated PEC cell was fabricated by an epitaxial lift-off and transfer of inversely grown InGaP/GaAs to a robust Ni-substrate and the resultant photoanode exhibits an STH efficiency of similar to 9% with stability similar to 150 h. Moreover, with the ability to access both sides of the device, we constructed a fully-integrated, unassisted-wireless "artificial leaf" system with an STH efficiency of similar to 6%. The excellent efficiency and stability achieved herein are attributed to the light harvesting/catalysis decoupling scheme, which concurrently improves the optical, electrical, and electrocatalytic characteristics.en_US
dc.language.isoen_USen_US
dc.titleAn efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junctionen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41467-019-12977-xen_US
dc.identifier.journalNATURE COMMUNICATIONSen_US
dc.citation.volume10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000497699100015en_US
dc.citation.woscount0en_US
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