標題: | Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient |
作者: | Chen, Lih-Ren Huang, Shen-Che Chiu, Jo-Lun Lu, Chien-Cheng Su, Wei-Ming Weng, Chen-Yuan Shen, Huan-Yu Lu, Tien-Chang Chen, Hsiang 光電工程學系 Department of Photonics |
關鍵字: | Failure mechanisms;Reliability;Near-UV LEDs;Bias stress |
公開日期: | 15-Oct-2019 |
摘要: | Degradation mechanisms of nitride-based near-ultraviolet (near-UV) light-emitting diodes (LEDs) were systematically analyzed by applying forward- and reverse-bias stresses to them in a salt water vapor ambient. The surface temperature of the forward-bias stress sample was higher than that of the reverse-bias stress sample. The high temperature of the forward-bias stress sample accelerated the chemical reaction of the device structure with salt water vapors and led to faster degradation. Composition analyses of the sample surface and cross-section were conducted to investigate the failure mechanism. The analyses results indicated that the erosion of the indium-tin-oxide layer enhanced the diffusion of the conducting metal into the LED crystal. The proposed method can effectively characterize the quality of near-UV LEDs in a short duration. |
URI: | http://dx.doi.org/10.1016/j.mee.2019.111158 http://hdl.handle.net/11536/153417 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2019.111158 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 218 |
起始頁: | 0 |
結束頁: | 0 |
Appears in Collections: | Articles |