標題: Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
作者: Nhu Quynh Diep
Liu, Cheng-Wei
Wu, Ssu-Kuan
Chou, Wu-Ching
Sa Hoang Huynh
Chang, Edward Yi
材料科學與工程學系
電子物理學系
國際半導體學院
Department of Materials Science and Engineering
Department of Electrophysics
International College of Semiconductor Technology
公開日期: 28-Nov-2019
摘要: Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layers was typically observed with the majority in epsilon-phase. Comprehensive investigations on temperature-dependent photoluminescence, Raman scattering, and X-ray diffraction indicated that the structure has been suffered an amount of strain, resulted from the screw-dislocation-driven growth mechanism as well as the stacking disorders between monolayer at the boundaries of the GaSe nanoflakes. In addition, Raman spectra under various wavelength laser excitations explored that the common epsilon-phase of 2D GaSe grown directly on GaAs can be transformed into the beta-phase by introducing a Se-pretreatment period at the initial growth process. This work provides an understanding of molecular beam epitaxy growth of 2D materials on three-dimensional substrates and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.
URI: http://dx.doi.org/10.1038/s41598-019-54406-5
http://hdl.handle.net/11536/153434
ISSN: 2045-2322
DOI: 10.1038/s41598-019-54406-5
期刊: SCIENTIFIC REPORTS
Volume: 9
起始頁: 0
結束頁: 0
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