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dc.contributor.authorCheng, Shu-Fengen_US
dc.contributor.authorHuang, Po-Tsangen_US
dc.contributor.authorWang, Li-Chunen_US
dc.contributor.authorChang, Mau-Chung Franken_US
dc.date.accessioned2020-01-02T00:04:24Z-
dc.date.available2020-01-02T00:04:24Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn2168-2356en_US
dc.identifier.urihttp://dx.doi.org/10.1109/MDAT.2019.2932935en_US
dc.identifier.urihttp://hdl.handle.net/11536/153438-
dc.description.abstractEditor's note: Multiband radio-frequency interconnect (MRFI) is an emerging technology to achieve low-latency and energy-efficient on-chip communication. This article proposes a BIST method to improve the reliability of MRFI-based design. -Partha Pratim Pande, Washington State Universityen_US
dc.language.isoen_USen_US
dc.subjectThrough-silicon viasen_US
dc.subjectBuilt-in self-testen_US
dc.subjectMaintenance engineeringen_US
dc.subjectThree-dimensional displaysen_US
dc.subjectCircuit faultsen_US
dc.subjectBandwidthen_US
dc.subjectFrequency division multiplexingen_US
dc.subjectmultiband RF-Interconnecten_US
dc.subjecttest methodologyen_US
dc.subjectTSV densityen_US
dc.subjectyield improvementen_US
dc.subjectPRBSen_US
dc.subjectphase erroren_US
dc.subjectBISTen_US
dc.subjectRen_US
dc.subjecte-fuseen_US
dc.titleBuilt-In Self-Test/Repair Methodology for Multiband RF-Interconnected TSV 3D Integrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/MDAT.2019.2932935en_US
dc.identifier.journalIEEE DESIGN & TESTen_US
dc.citation.volume36en_US
dc.citation.issue6en_US
dc.citation.spage63en_US
dc.citation.epage71en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電機資訊學士班zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentUndergraduate Honors Program of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000499992900007en_US
dc.citation.woscount0en_US
Appears in Collections:Articles