AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

doi:10.1007/s00340-011-4669-y

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DC Field	Value	Language
dc.contributor.author	Chen, Y. -F.	en_US
dc.contributor.author	Lee, Y. C.	en_US
dc.contributor.author	Huang, S. C.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.date.accessioned	2014-12-08T15:21:35Z	-
dc.date.available	2014-12-08T15:21:35Z	-
dc.date.issued	2012-01-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00340-011-4669-y	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15344	-
dc.description.abstract	An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 mu m. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.	en_US
dc.language.iso	en_US	en_US
dc.title	AlGaInAs multiple-quantum-well 1.2-mu m semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00340-011-4669-y	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	106	en_US
dc.citation.issue	1	en_US
dc.citation.spage	57	en_US
dc.citation.epage	62	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000299306400009	-
dc.citation.woscount	0	-
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