完整後設資料紀錄
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dc.contributor.authorHuang, Guan-Minen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorKumar, Nageshen_US
dc.contributor.authorHuang, Chih-Yangen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2020-02-02T23:54:26Z-
dc.date.available2020-02-02T23:54:26Z-
dc.date.issued2020-01-14en_US
dc.identifier.issn2050-7488en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c9ta09988cen_US
dc.identifier.urihttp://hdl.handle.net/11536/153479-
dc.description.abstractThe enhancement of operational life and charging speed have been considered to be two of the major factors that will influence the development of energy storage devices in the future. Here, we utilized an electron beam (e-beam) to retrieve Li metal from LiF, the degradation product of LiPF6, and trigger the further lithiation of NiFe2O4/carbon nanotubes (CNTs) to relieve the degradation of the electrolyte and achieve ultrafast lithiation. Accordingly, in situ transmission electron microscopy (in situ TEM) was used to investigate the comprehensive mechanism of the whole process. The e-beam acting on the degradation product, i.e., LiF clusters, led to the generation of Li flakes, which served as the source for the subsequent lithiation. Then, with these Li flakes, the chemical lithiation of the NiFe2O4/CNTs was triggered, resulting in phase transformation to Ni and Fe nanograins. Compared to "electrochemical" lithiation, ultrahigh reaction speed and the ability to charge without a directly applied potential in the "chemical" lithiation are expected to extend lithiation to more diverse applications. As a result of this investigation, we have provided a new strategy for designing novel energy storage devices for the energy-harvesting field.en_US
dc.language.isoen_USen_US
dc.titleIn situ TEM investigation of electron beam-induced ultrafast chemical lithiation for chargingen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c9ta09988cen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Aen_US
dc.citation.volume8en_US
dc.citation.issue2en_US
dc.citation.spage648en_US
dc.citation.epage655en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000505561500014en_US
dc.citation.woscount0en_US
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