完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsu, Ming-Yangen_US
dc.contributor.authorLin, Grayen_US
dc.date.accessioned2020-02-02T23:54:29Z-
dc.date.available2020-02-02T23:54:29Z-
dc.date.issued2018-09-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/photonics5030027en_US
dc.identifier.urihttp://hdl.handle.net/11536/153508-
dc.description.abstractQuantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.en_US
dc.language.isoen_USen_US
dc.subjectphotonic crystalsen_US
dc.subjectsurface-emitting lasersen_US
dc.subjectdistributed Bragg reflectoren_US
dc.subjectquantum dotsen_US
dc.titleQuantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.3390/photonics5030027en_US
dc.identifier.journalPHOTONICSen_US
dc.citation.volume5en_US
dc.citation.issue3en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000448336200013en_US
dc.citation.woscount1en_US
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