完整後設資料紀錄
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dc.contributor.authorGu, Siyongen_US
dc.contributor.authorHsieh, Chien-Teen_US
dc.contributor.authorMallick, Bikash Chandraen_US
dc.contributor.authorGandomi, Yasser Ashrafen_US
dc.contributor.authorChang, Jeng-Kueien_US
dc.contributor.authorLi, Jianlinen_US
dc.contributor.authorLiaw, Peter K.en_US
dc.date.accessioned2020-02-02T23:54:33Z-
dc.date.available2020-02-02T23:54:33Z-
dc.date.issued2020-01-14en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c9tc05748jen_US
dc.identifier.urihttp://hdl.handle.net/11536/153525-
dc.description.abstractNitrogen functionalization on graphene sheets has solely been demonstrated with a stepwise amidation implementation within the literature. The present work proposes an atomic layer amidation (ALN) technique to linearly adjust the surface amidation level on the carbon nanostructures. The ALN cycling protocol proposed in this work consists of an ammonia pulse, nitrogen pulse, and pumping at 100 and 150 degrees C. Both surface amidation and oxidation levels were linearly controlled by the ALN cycle number. The ALN technique was demonstrated as a self-limiting process capable of step-by-step N-functionalizing graphene oxide (GO) sheets on the atomic scale. The amidation reaction rates were ca. 0.023 (100 degrees C) and 0.028 atomic percent (at%) cycle(-1) (150 degrees C), and the apparent activation energy was determined to be 14.3 kJ mol(-1) (= 0.148 eV atom(-1)) from the Arrhenius equation. The amidation mechanism for forming the "chemical N" and "lattice N" at an atomic level was also proposed. Linearly controlling the optical band-gap with the ALN cycle number was suggested as a robust method for tuning the oxidation as well as the amidation level on the GO sheets. In this sense, nitrogen functionalization can be utilized for engineering any desirable properties within the graphene sheets.en_US
dc.language.isoen_USen_US
dc.titleAmino-functionalization on graphene oxide sheets using an atomic layer amidation techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c9tc05748jen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.citation.volume8en_US
dc.citation.issue2en_US
dc.citation.spage700en_US
dc.citation.epage705en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000506852400027en_US
dc.citation.woscount0en_US
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