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dc.contributor.authorChen, Qianen_US
dc.contributor.authorDai, Jiangnanen_US
dc.contributor.authorLi, Xiaohangen_US
dc.contributor.authorGao, Yangen_US
dc.contributor.authorLong, Hanlingen_US
dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorChen, Changqingen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2020-02-02T23:54:35Z-
dc.date.available2020-02-02T23:54:35Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2019.2948952en_US
dc.identifier.urihttp://hdl.handle.net/11536/153545-
dc.description.abstractLow external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.en_US
dc.language.isoen_USen_US
dc.subjectDUV LEDsen_US
dc.subjectPN electrode locationen_US
dc.subjectcurrent spreadingen_US
dc.titleEnhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Designen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2019.2948952en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue12en_US
dc.citation.spage1925en_US
dc.citation.epage1928en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000507331900005en_US
dc.citation.woscount0en_US
Appears in Collections:Articles