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dc.contributor.authorWang, Cheng-Jyunen_US
dc.contributor.authorYou, Hsin-Chiangen_US
dc.contributor.authorLin, Kuanen_US
dc.contributor.authorOu, Jen-Hungen_US
dc.contributor.authorChao, Keng-Hsienen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2020-02-02T23:54:38Z-
dc.date.available2020-02-02T23:54:38Z-
dc.date.issued2019-11-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/ma12213639en_US
dc.identifier.urihttp://hdl.handle.net/11536/153589-
dc.description.abstractHighly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 x 10(-7) A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.en_US
dc.language.isoen_USen_US
dc.subjectzinc oxide-based thin-film transistorsen_US
dc.subjectgold-nanoparticlesen_US
dc.subjectphototransistorsen_US
dc.subjectspray pyrolysisen_US
dc.subjectplasmonic energy detectionen_US
dc.titleHighly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/ma12213639en_US
dc.identifier.journalMATERIALSen_US
dc.citation.volume12en_US
dc.citation.issue21en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000502798800180en_US
dc.citation.woscount0en_US
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