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dc.contributor.authorLi, Yangen_US
dc.contributor.authorJin, Yamingen_US
dc.contributor.authorLu, Xiaomeien_US
dc.contributor.authorYang, Jan-Chien_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorHuang, Fengzhenen_US
dc.contributor.authorZhu, Jinsongen_US
dc.contributor.authorCheong, Sang-Wooken_US
dc.date.accessioned2020-02-02T23:54:38Z-
dc.date.available2020-02-02T23:54:38Z-
dc.date.issued2017-08-04en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41535-017-0047-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/153592-
dc.description.abstractFerroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.en_US
dc.language.isoen_USen_US
dc.titleRewritable ferroelectric vortex pairs in BiFeO3en_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41535-017-0047-2en_US
dc.identifier.journalNPJ QUANTUM MATERIALSen_US
dc.citation.volume2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000407437300001en_US
dc.citation.woscount45en_US
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