Full metadata record
DC FieldValueLanguage
dc.contributor.authorYang, Shih-Hsienen_US
dc.contributor.authorLin, Che-Yien_US
dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorLi, Mengjiaoen_US
dc.contributor.authorLee, Ko-Chunen_US
dc.contributor.authorChen, Ciao-Fenen_US
dc.contributor.authorYang, Feng-Shouen_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.contributor.authorUeno, Keijien_US
dc.contributor.authorWatanabe, Kenjien_US
dc.contributor.authorTaniguchi, Takashien_US
dc.contributor.authorTsukagoshi, Kazuhitoen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.date.accessioned2020-02-02T23:54:41Z-
dc.date.available2020-02-02T23:54:41Z-
dc.date.issued2019-12-18en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.9b15036en_US
dc.identifier.urihttp://hdl.handle.net/11536/153626-
dc.description.abstractThe oxygen (O-2)-dependent resistance change of multilayered molybdenum ditelluride (MoTe2) channels was characterized. A variation of the channel resistance could reproducibly determine relative O-2 content (denoted as the O-2 index). We found that Joule heating in a layered MoTe2 field-effect transistor caused the O-2 index to decrease drastically from 100 to 12.1% in back gate modulation. Furthermore, Joule heating caused effective O-2 desorption from the MoTe2 surface and repeatable O-2 detection by multilayered MoTe2 channels was realized. This work not only explored the influence of O-2 on the electrical properties of multilayered MoTe2 channels but also revealed that MoTe2 channels are promising for sensing O-2 in an environmental condition.en_US
dc.language.isoen_USen_US
dc.subjectlayered electronicsen_US
dc.subjectMoTe2en_US
dc.subjectO-2 indexen_US
dc.subjectrepeatableen_US
dc.subjectoxygen detectionen_US
dc.titleOxygen-Sensitive Layered MoTe2 Channels for Environmental Detectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.9b15036en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume11en_US
dc.citation.issue50en_US
dc.citation.spage47047en_US
dc.citation.epage47053en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000503918300069en_US
dc.citation.woscount0en_US
Appears in Collections:Articles