完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2020-02-02T23:54:42Z-
dc.date.available2020-02-02T23:54:42Z-
dc.date.issued2017-12-05en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41535-017-0069-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/153647-
dc.description.abstractThe research field of oxide heteroepitaxy suffers from the characteristics of misfit strain and substrate clamping, hampering the optimization of performance and the gain of fundamental understanding of oxide systems. Recently, there are demonstrations on functional oxides epitaxially fabricated on layered muscovite substrate. In these heterostructures, due to the weak interaction between substrate and film, they show the lattice of films close to bulk with excellent strictive properties, suggesting that these critical problems can be potentially solved by van der Waals oxide heteroepitaxy. In addition, by exploiting the transparent and flexible features of muscovite, such a heteroepitaxy can deliver new material solutions to transparent soft technology. In this paper, the history, development, and current status of van der Waals oxide heteroepitaxy are addressed and discussed. In the end, new research directions in terms of fundamental study and practical application are proposed to highlight the importance of this research field.en_US
dc.language.isoen_USen_US
dc.titleVan der Waals oxide heteroepitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41535-017-0069-9en_US
dc.identifier.journalNPJ QUANTUM MATERIALSen_US
dc.citation.volume2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000423482800001en_US
dc.citation.woscount41en_US
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