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dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorLin, Bo-Hanen_US
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorLee, Ming-Haoen_US
dc.contributor.authorChu, Ming-Wenen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorYao, Wangen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorShih, Chih-Kangen_US
dc.date.accessioned2020-02-02T23:54:42Z-
dc.date.available2020-02-02T23:54:42Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn2375-2548en_US
dc.identifier.urihttp://dx.doi.org/10.1126/sciadv.aax7407en_US
dc.identifier.urihttp://hdl.handle.net/11536/153650-
dc.description.abstractExcitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species-dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.en_US
dc.language.isoen_USen_US
dc.titleTailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spinen_US
dc.typeArticleen_US
dc.identifier.doi10.1126/sciadv.aax7407en_US
dc.identifier.journalSCIENCE ADVANCESen_US
dc.citation.volume5en_US
dc.citation.issue12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000505069600049en_US
dc.citation.woscount0en_US
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