完整後設資料紀錄
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dc.contributor.authorChe, Mu-Lungen_US
dc.contributor.authorTeng, Jun-Yuanen_US
dc.contributor.authorLai, Po-Chengen_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2014-12-08T15:21:37Z-
dc.date.available2014-12-08T15:21:37Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://dx.doi.org/10.1557/jmr.2011.384en_US
dc.identifier.urihttp://hdl.handle.net/11536/15365-
dc.description.abstractTwo high-temperature pore generators (porogens) have been used to study the effect of porogen structure on moisture uptake and k-value in methylsilsesquioxane/porogen hybrid films and their corresponding porous films in a postintegration porogen removal scheme. Poly(styrene-b-4-vinylpyridine) containing di-block structure and pyridine polar group leads to higher moisture uptake and k-value in the hybrid films as compared to poly(styrene-block-butadiene-block-styrene) with symmetrical structure and nonpolar groups. Moreover, the moisture uptake behavior in both as-prepared hybrid films is in physical sorption mode based on their reversible adsorption-desorption curve measured by quartz crystal microbalance. After porogen removal, the k-values of porous films are favorably not influenced by porogen structures, and their moisture uptake is as low as 1.78 wt% even at 40 vol.% porosity. However, based on the simulation of the modified-Rayleigh model, the porous films are found to possess 0.4 vol.% chemisorbed moisture on the pore surface, resulting in 17-23% deviation from the ideal k-values.en_US
dc.language.isoen_USen_US
dc.titleMoisture uptake and dielectric property of methylsilsesquioxane/high-temperature porogen hybrids and porous low-k filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1557/jmr.2011.384en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume26en_US
dc.citation.issue23en_US
dc.citation.spage2987en_US
dc.citation.epage2995en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000299875400015-
dc.citation.woscount1-
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