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dc.contributor.authorBorland, Johnen_US
dc.contributor.authorChaung, Shang-Shuinen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorJoshi, Abhijeeten_US
dc.contributor.authorBasol, Bulenten_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorKuroi, Takashien_US
dc.contributor.authorGoodman, Garyen_US
dc.contributor.authorKhapochkina, Nadyaen_US
dc.contributor.authorBuyuklimanli, Temelen_US
dc.date.accessioned2020-02-02T23:55:35Z-
dc.date.available2020-02-02T23:55:35Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-4-86348-727-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/153690-
dc.language.isoen_USen_US
dc.titleComparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineeringen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000502755400009en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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