Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Borland, John	en_US
dc.contributor.author	Chaung, Shang-Shuin	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.contributor.author	Joshi, Abhijeet	en_US
dc.contributor.author	Basol, Bulent	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Kuroi, Takashi	en_US
dc.contributor.author	Goodman, Gary	en_US
dc.contributor.author	Khapochkina, Nadya	en_US
dc.contributor.author	Buyuklimanli, Temel	en_US
dc.date.accessioned	2020-02-02T23:55:35Z	-
dc.date.available	2020-02-02T23:55:35Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-4-86348-727-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153690	-
dc.language.iso	en_US	en_US
dc.title	Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000502755400009	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文