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dc.contributor.authorChang, Shaneen_US
dc.contributor.authorZhao, Mingen_US
dc.contributor.authorSpampinato, Valentinaen_US
dc.contributor.authorFranquet, Alexisen_US
dc.contributor.authorThi-Hien Doen_US
dc.contributor.authorUedono, Akiraen_US
dc.contributor.authorTien Tung Luongen_US
dc.contributor.authorWang, Tsang-Hsuanen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2020-03-02T03:23:24Z-
dc.date.available2020-03-02T03:23:24Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.201900755en_US
dc.identifier.urihttp://hdl.handle.net/11536/153705-
dc.description.abstractReducing radio frequency (RF) transmission loss is a key requirement when fabricating GaN-on-Si RF devices. To get a better insight into the RF loss mechanism in the GaN-on-Si structure, the RF loss of an AlN/Si template is investigated by varying the growth temperature of AlN during a metalorganic chemical vapor deposition process. The results show that the RF loss of the AlN/Si template is dominated by the interface loss due to the p-type conductive channel at the AlN/Si interface, which is induced by the thermal diffusion of Al during the high-temperature growth. Although a low growth temperature of the AlN nucleation layer can suppress the RF loss in the AlN/Si template, it results in a low crystalline quality of AlN for practical use. Optimizing the growth temperature of the AlN nucleation layer is essential to obtain a good balance between the crystalline quality, morphological quality, and RF loss such that the AlN/Si template is suitable for epitaxial growth of the complete GaN-on-Si RF device structure.en_US
dc.language.isoen_USen_US
dc.subjectAlN nucleation layersen_US
dc.subjectcoplanar waveguidesen_US
dc.subjectGaN on Sien_US
dc.subjecthigh frequencyen_US
dc.subjectmetalorganic chemical vapor depositionen_US
dc.subjectradio frequency lossen_US
dc.titleThe Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN-on-Si Heterostructureen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssa.201900755en_US
dc.identifier.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000512207900001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles