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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorKuo, Song-Nianen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorZhang, Yu-Xinen_US
dc.contributor.authorXu, Nien_US
dc.contributor.authorLiu, Wu-Yangen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2020-03-02T03:23:28Z-
dc.date.available2020-03-02T03:23:28Z-
dc.date.issued2020-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2020.17560en_US
dc.identifier.urihttp://hdl.handle.net/11536/153747-
dc.description.abstractRecently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In-Ga-Zn-O TFT. Thin Solid Films, 520, pp.1489-1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor.en_US
dc.language.isoen_USen_US
dc.subjectRRAMen_US
dc.subjectMicrowave Annealingen_US
dc.subjectIGZOen_US
dc.subjectEnduranceen_US
dc.subjectReliabilityen_US
dc.titleReliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2020.17560en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue7en_US
dc.citation.spage4057en_US
dc.citation.epage4060en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000508646300012en_US
dc.citation.woscount0en_US
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