完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Yi-Mingen_US
dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorZhang, Yu-Xinen_US
dc.contributor.authorXu, Nien_US
dc.contributor.authorYu, Tsung-Yingen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2020-03-02T03:23:28Z-
dc.date.available2020-03-02T03:23:28Z-
dc.date.issued2020-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2020.17556en_US
dc.identifier.urihttp://hdl.handle.net/11536/153749-
dc.description.abstractAmorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm(2)/V.S), larger I-on/I-off ratio (>10(6)), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780-1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497-1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114-5117). The results show that with appropriate flow ratio of Ar/H-2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (mu(FE)) 19.7 cm(2)/V.S, threshold voltage (V-T) 1.18 V, subthreshold swing (SS) 81 mV/decade, and I-on/I-off ratio 5.35 x 10(7).en_US
dc.language.isoen_USen_US
dc.subjectAP-PECVDen_US
dc.subjectIGZO TFTsen_US
dc.subjectHydrogen Plasmaen_US
dc.titleStudy of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2020.17556en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue7en_US
dc.citation.spage4110en_US
dc.citation.epage4113en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000508646300019en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文