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dc.contributor.authorPrakoso, Suhendro Purboen_US
dc.contributor.authorKumar, Sushilen_US
dc.contributor.authorWu, San-Lienen_US
dc.contributor.authorCiou, Guan-Tingen_US
dc.contributor.authorKe, Yao-Jinen_US
dc.contributor.authorVenkateswarlu, Samalaen_US
dc.contributor.authorTao, Yu-Taien_US
dc.contributor.authorWang, Chien-Lungen_US
dc.date.accessioned2020-03-02T03:23:29Z-
dc.date.available2020-03-02T03:23:29Z-
dc.date.issued2020-01-08en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.9b18318en_US
dc.identifier.urihttp://hdl.handle.net/11536/153754-
dc.description.abstractThe physical properties, packing, morphology, and semiconducting performance of a planar pi-conjugated system can be effectively modified by introducing side chains and substituent groups, both of which can be complementary to the pi framework in changing the intermolecular association, frontier molecular orbital energy, optical band gap, and others. We herein show that installation of end-capped electron-withdrawing groups (EWGs), such as dicyanovinyl (-DCV), 3-ethylrhodanine (-RD), and 2-(3-oxo-indan-1-ylidene)-malononitrile (-INCN), together with siloxane side chains to the backbones of dithienyldiketopyrrolopyrrole (DPPT), such as DPPT-Si-DCV, DPPT-Si-RD, and DPPT-Si-INCN, can greatly improve its solubility, air stability, and film morphology to serve as an n-channel in thin-film transistor fabrication. The EWGs attached to the DPPT core narrowed the optical band gap (E-g(opt)) and changed the highest occupied molecular orbital and the lowest unoccupied molecular orbital energies (E-HOMO and E-LUMO), making them suitable for n-channel field-effect transistor (FET) applications. The benefits of introducing siloxane side chains to the DPPT core include enhanced solubility, low crystallization barrier, enantiotropic phase behavior, and much improved FET performance. The DPPT-Si-INCN film displayed low-lying HOMO (-5.82 eV) and LUMO (-4.60 eV) energy levels and an optical band gap as low as 1.22 eV, all of which suggest that this derivative can be quite resistant toward aerial oxidation. Thin films of these derivatives were prepared by the solution-shear method. A comparison of the solution-sheared films indicated that the molecular packing motif of DPPT-Si-INCN film was somehow different from that of DPPT-Si-DCV and DPPT-Si-RD, in which the pi-pi stacking tended to align orthogonally to the shearing direction. This specific pi-pi stacking alignment could have an impact on the electron mobility (mu(e)) values in transistors based on the solution-sheared films.en_US
dc.language.isoen_USen_US
dc.subjectdiketopyrrolopyrroleen_US
dc.subjectsiloxaneen_US
dc.subjectelectron withdrawingen_US
dc.subjectsolid-state morphologyen_US
dc.subjectorganic thin-film transistoren_US
dc.titlen-Type Thin-Film Transistors Based on Diketopyrrolopyrrole Derivatives: Role of Siloxane Side Chains and Electron-Withdrawing Substituentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.9b18318en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume12en_US
dc.citation.issue1en_US
dc.citation.spage1169en_US
dc.citation.epage1178en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000507146100117en_US
dc.citation.woscount0en_US
Appears in Collections:Articles