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dc.contributor.authorMohanty, Srikant Kumaren_US
dc.contributor.authorChen, Yu-Yanen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2020-03-02T03:23:29Z-
dc.date.available2020-03-02T03:23:29Z-
dc.date.issued2019-12-23en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-019-56292-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/153758-
dc.description.abstractSelf-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The I-DS difference between the pulse and DC bias measurement was about 21% at high bias V-DS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately similar to 22 degrees C in a HEMT operating at similar to 10.6 Wmm(-1) after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.en_US
dc.language.isoen_USen_US
dc.titleThermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-019-56292-3en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000508904800001en_US
dc.citation.woscount0en_US
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