Terahertz InP HBT Oscillators

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Rieh, Jae-Sung	en_US
dc.contributor.author	Yun, Jongwon	en_US
dc.contributor.author	Yoon, Daekeun	en_US
dc.contributor.author	Kim, Jungsoo	en_US
dc.contributor.author	Son, Heekang	en_US
dc.date.accessioned	2020-05-05T00:00:50Z	-
dc.date.available	2020-05-05T00:00:50Z	-
dc.date.issued	2018-01-01	en_US
dc.identifier.isbn	978-1-5386-5971-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153854	-
dc.description.abstract	An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.	en_US
dc.language.iso	en_US	en_US
dc.subject	Submillimeter wave circuits	en_US
dc.subject	heterojunction bipolar transistors (HBT)	en_US
dc.subject	oscillators	en_US
dc.title	Terahertz InP HBT Oscillators	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT)	en_US
dc.citation.spage	82	en_US
dc.citation.epage	84	en_US
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000519757900028	en_US
dc.citation.woscount	0	en_US
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