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dc.contributor.authorLai, Bo-Chengen_US
dc.contributor.authorChen, Bo-Yaen_US
dc.contributor.authorChen, Bo-Enen_US
dc.contributor.authorHsin, Yi-Daen_US
dc.date.accessioned2020-05-05T00:01:27Z-
dc.date.available2020-05-05T00:01:27Z-
dc.date.issued2020-03-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2019.2957455en_US
dc.identifier.urihttp://hdl.handle.net/11536/153886-
dc.description.abstractSupporting multiple write ports is one of the main challenges when designing algorithmic multiported memory (AMM). AMM supports concurrent accesses by cooperating multiple, low-complexity memory modules together with logical operations. When scaling the number of write ports, the nontable-based approaches quadratically increase the number of memory modules, whereas the table-based approaches tend to introduce complex lookup tables and access handling logics. In this article, we introduce REMAP+, an efficient banking architecture to support multiple writes. We optimize the pipeline of REMAP+ to achieve high access bandwidth and more efficient table access. We also exploit the structured architecture of REMAP+ and propose a systematic design flow to automate the scaling of write ports and optimization of banking. Comprehensive analysis is presented to reveal the insight into design features and concerns. Based on extensive experiments, we have shown that REMAP+ outperforms the existing write schemes (XOR, live value table (LVT), and REMAP) with higher bandwidth (49%, 50%, 18%), lower energy (28%, 49%, 54%), and smaller area (43%, 37%, 35%).en_US
dc.language.isoen_USen_US
dc.subjectAlgorithmic multiported memory (AMM)en_US
dc.subjectbanking structureen_US
dc.subjectmemory architectureen_US
dc.subjectmultiple writesen_US
dc.titleREMAP plus : An Efficient Banking Architecture for Multiple Writes of Algorithmic Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2019.2957455en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume28en_US
dc.citation.issue3en_US
dc.citation.spage660en_US
dc.citation.epage671en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000519545300005en_US
dc.citation.woscount0en_US
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