標題: Investigation of the spectral characteristics of silicon-vacancy centers in ultrananocrystalline diamond nanostructures and single crystalline diamond
作者: Kunuku, Srinivasu
Chen, Yen-Chun
Chen, Chien-Hsu
Kandasami, Asokan
Chang, Wen-Hao
Niu, Huan
Leou, Keh-Chyang
Lin, I-Nan
電子物理學系
Department of Electrophysics
公開日期: 21-Jan-2020
摘要: Silicon-vacancy (SiV) centers were produced in single crystalline diamond (SCD) and ultrananocrystalline diamond (UNCD) nanostructures via Si ion implantation or in situ Si doping. SiV-embedded UNCD (SiV-UNCD) was fabricated by both top-down and bottom-up methods. The spectral properties of the SiV centers, including the zero phonon line (ZPL) width and decay time, were investigated in the SCD and UNCD nanostructures. All the SiV-UNCD nanostructures showed bright emission regardless of the preparation method. However, the decay time of the SiV centers was affected by the synthesis procedure. A SiV decay time of tau similar to 0.19 ns was observed for UNCD nanostructures formed by in situ doping, whereas the SiV decay time was similar to 0.43 ns for SiV-UNCD clusters prepared by Si ion implantation into UNCD deposited on Ti/sapphire substrates. The ultrasonication of UNCD clusters on Ti/sapphire pyramids produced bright SiV-UNCD nanoclusters with sizes of similar to 50 nm, a ZPL width of 13.5 nm, and a decay time of 0.35 ns, suggesting promising potential in bioimaging applications. SiV-containing SCD (type Ia or type IIa) showed enhanced SiV spectral properties with a ZPL width of 6.08 nm and longer decay time of 1.3 ns. Published under license by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.5123263
http://hdl.handle.net/11536/153935
ISSN: 0021-8979
DOI: 10.1063/1.5123263
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 127
Issue: 3
起始頁: 0
結束頁: 0
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