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dc.contributor.authorThai Duy Haen_US
dc.contributor.authorYen, Minen_US
dc.contributor.authorLai, Yu-Hongen_US
dc.contributor.authorKuo, Chang-Yangen_US
dc.contributor.authorChen, Chien-Teen_US
dc.contributor.authorTanaka, Arataen_US
dc.contributor.authorTsai, Li-Zaien_US
dc.contributor.authorZhao, Yi-Fengen_US
dc.contributor.authorDuan, Chun-Gangen_US
dc.contributor.authorLee, Shang-Fanen_US
dc.contributor.authorChang, Chun-Fuen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2020-05-05T00:01:30Z-
dc.date.available2020-05-05T00:01:30Z-
dc.date.issued2020-02-07en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c9nr08810een_US
dc.identifier.urihttp://hdl.handle.net/11536/153945-
dc.description.abstractThe employment of flexible muscovite substrates has given us the feasibility of applying strain to heterostructures dynamically by mechanical bending. In this study, this novel approach is utilized to investigate strain effects on the exchange coupling in ferromagnetic Co and anti-ferromagnetic CoO (Co/CoO) bilayers. Two different Co/CoO bilayer heterostructures were grown on muscovite substrates by oxide molecular beam epitaxy, with the CoO layer being purely (111)- and (100)-oriented. The strain-dependent exchange coupling effect can only be observed on Co/CoO(100)/mica but not on Co/CoO(111)/mica. The origin of this phenomenon is attributed to the anisotropic spin re-orientation induced by mechanical bending. The strain-dependent magnetic anisotropy of the bilayers determined by anisotropic magnetoresistance measurements confirms this conjecture. This study elucidates the fundamental understanding of how magnetic exchange coupling can be tuned by externally applied strain via mechanical bending and, hence, provides a novel approach for implementing flexible spintronic devices.en_US
dc.language.isoen_USen_US
dc.titleMechanically tunable exchange coupling of Co/CoO bilayers on flexible muscovite substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c9nr08810een_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume12en_US
dc.citation.issue5en_US
dc.citation.spage3284en_US
dc.citation.epage3291en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000516533300039en_US
dc.citation.woscount0en_US
Appears in Collections:Articles