Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Pereira, V. M. | en_US |
dc.contributor.author | Wu, C. N. | en_US |
dc.contributor.author | Liu, C. E. | en_US |
dc.contributor.author | Liao, S-S | en_US |
dc.contributor.author | Chang, C. F. | en_US |
dc.contributor.author | Kuo, C-Y | en_US |
dc.contributor.author | Koz, C. | en_US |
dc.contributor.author | Schwarz, U. | en_US |
dc.contributor.author | Lin, H-J | en_US |
dc.contributor.author | Chen, C. T. | en_US |
dc.contributor.author | Tjeng, L. H. | en_US |
dc.contributor.author | Altendorf, S. G. | en_US |
dc.date.accessioned | 2020-05-05T00:01:31Z | - |
dc.date.available | 2020-05-05T00:01:31Z | - |
dc.date.issued | 2020-02-28 | en_US |
dc.identifier.issn | 2475-9953 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevMaterials.4.023405 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153955 | - |
dc.description.abstract | We have synthesized Fe1+y Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known from studies on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L-2(,3) and Te M-4(,5) edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal Fe-1.(14) Te. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Molecular beam epitaxy preparation and in situ characterization of FeTe thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevMaterials.4.023405 | en_US |
dc.identifier.journal | PHYSICAL REVIEW MATERIALS | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000517314500004 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |