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dc.contributor.authorPereira, V. M.en_US
dc.contributor.authorWu, C. N.en_US
dc.contributor.authorLiu, C. E.en_US
dc.contributor.authorLiao, S-Sen_US
dc.contributor.authorChang, C. F.en_US
dc.contributor.authorKuo, C-Yen_US
dc.contributor.authorKoz, C.en_US
dc.contributor.authorSchwarz, U.en_US
dc.contributor.authorLin, H-Jen_US
dc.contributor.authorChen, C. T.en_US
dc.contributor.authorTjeng, L. H.en_US
dc.contributor.authorAltendorf, S. G.en_US
dc.date.accessioned2020-05-05T00:01:31Z-
dc.date.available2020-05-05T00:01:31Z-
dc.date.issued2020-02-28en_US
dc.identifier.issn2475-9953en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevMaterials.4.023405en_US
dc.identifier.urihttp://hdl.handle.net/11536/153955-
dc.description.abstractWe have synthesized Fe1+y Te thin films by means of molecular beam epitaxy (MBE) under Te-limited growth conditions. We found that epitaxial layer-by-layer growth is possible for a wide range of excess Fe values, wider than expected from what is known from studies on the bulk material. Using x-ray magnetic circular dichroism spectroscopy at the Fe L-2(,3) and Te M-4(,5) edges, we observed that films with high excess Fe contain ferromagnetic clusters while films with lower excess Fe remain nonmagnetic. Moreover, x-ray absorption spectroscopy showed that it is possible to obtain films with very similar electronic structure as that of a high quality bulk single crystal Fe-1.(14) Te. Our results suggest that MBE with Te-limited growth may provide an opportunity to synthesize FeTe films with smaller amounts of excess Fe as to come closer to a possible superconducting phase.en_US
dc.language.isoen_USen_US
dc.titleMolecular beam epitaxy preparation and in situ characterization of FeTe thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevMaterials.4.023405en_US
dc.identifier.journalPHYSICAL REVIEW MATERIALSen_US
dc.citation.volume4en_US
dc.citation.issue2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000517314500004en_US
dc.citation.woscount0en_US
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