A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-finger nMOSFETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Guo, Jyh-Chyurn	en_US
dc.contributor.author	Yeh, Kuo-Liang	en_US
dc.date.accessioned	2020-05-05T00:01:56Z	-
dc.date.available	2020-05-05T00:01:56Z	-
dc.date.issued	2018-01-01	en_US
dc.identifier.isbn	978-2-87487-052-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/153997	-
dc.description.abstract	A new compact model has been developed in this paper for accurate simulation of RF noise and extraction of actual intrinsic noise in sub-40 nm multi-finger nMOSFETs. This model can predict and verify the excess noise sources before and after deembedding, the mechanism responsible for the complicated layout dependence in various noise parameters, and facilitate optimization design for low noise devices and circuits in nanoscale CMOS technology.	en_US
dc.language.iso	en_US	en_US
dc.subject	Compact model	en_US
dc.subject	RF noise	en_US
dc.subject	layout dependence	en_US
dc.subject	multi-finger	en_US
dc.subject	nanoscale	en_US
dc.subject	CMOS	en_US
dc.title	A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-finger nMOSFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC)	en_US
dc.citation.spage	146	en_US
dc.citation.epage	149	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000516752900037	en_US
dc.citation.woscount	0	en_US
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