High-Speed Electro-Absorption Modulated Laser at 1.3 mu m Wavelength Based on Selective Area Growth Technique

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ahmad, Zohauddin	en_US
dc.contributor.author	Chao, Rui-Lin	en_US
dc.contributor.author	Hung, Yung-Jr	en_US
dc.contributor.author	Chen, Jyehong	en_US
dc.contributor.author	Wei, Chia-Chien	en_US
dc.contributor.author	Shi, Jin-Wei	en_US
dc.date.accessioned	2020-05-05T00:01:57Z	-
dc.date.available	2020-05-05T00:01:57Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-7281-0615-1	en_US
dc.identifier.issn	2374-0140	en_US
dc.identifier.uri	http://hdl.handle.net/11536/154012	-
dc.description.abstract	We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 mu m wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.	en_US
dc.language.iso	en_US	en_US
dc.title	High-Speed Electro-Absorption Modulated Laser at 1.3 mu m Wavelength Based on Selective Area Growth Technique	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 IEEE PHOTONICS CONFERENCE (IPC)	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000520481500131	en_US
dc.citation.woscount	0	en_US
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