Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lin, Y. C.	en_US
dc.contributor.author	Lee, M. W.	en_US
dc.contributor.author	Tsai, M. Y.	en_US
dc.contributor.author	Wang, C.	en_US
dc.contributor.author	Yao, J. N.	en_US
dc.contributor.author	Huang, T. J.	en_US
dc.contributor.author	Hsu, H. T.	en_US
dc.contributor.author	Maa, J. S.	en_US
dc.contributor.author	Chang, Edward Y.	en_US
dc.date.accessioned	2020-05-05T00:01:57Z	-
dc.date.available	2020-05-05T00:01:57Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-2-87487-056-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/154014	-
dc.description.abstract	In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.	en_US
dc.language.iso	en_US	en_US
dc.subject	copper metallization	en_US
dc.subject	AlGaN/GaN HEMT	en_US
dc.subject	low noise figure	en_US
dc.subject	thermal stability	en_US
dc.subject	interconnect metal	en_US
dc.title	Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019)	en_US
dc.citation.spage	68	en_US
dc.citation.epage	71	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000520495200018	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper