1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorLee, M. W.en_US
dc.contributor.authorTsai, M. Y.en_US
dc.contributor.authorWang, C.en_US
dc.contributor.authorYao, J. N.en_US
dc.contributor.authorHuang, T. J.en_US
dc.contributor.authorHsu, H. T.en_US
dc.contributor.authorMaa, J. S.en_US
dc.contributor.authorChang, Edward Y.en_US
dc.date.accessioned2020-05-05T00:01:57Z-
dc.date.available2020-05-05T00:01:57Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-2-87487-056-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/154014-
dc.description.abstractIn this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.en_US
dc.language.isoen_USen_US
dc.subjectcopper metallizationen_US
dc.subjectAlGaN/GaN HEMTen_US
dc.subjectlow noise figureen_US
dc.subjectthermal stabilityen_US
dc.subjectinterconnect metalen_US
dc.titleStudy of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019)en_US
dc.citation.spage68en_US
dc.citation.epage71en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000520495200018en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


相關內容
Loading...