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dc.contributor.authorLin, Chin-Tengen_US
dc.contributor.authorYu, Yi-Hsinen_US
dc.contributor.authorKing, Jung-Taien_US
dc.contributor.authorLiu, Chi-Hsienen_US
dc.contributor.authorLiao, Lun-Deen_US
dc.date.accessioned2020-05-05T00:02:17Z-
dc.date.available2020-05-05T00:02:17Z-
dc.date.issued2020-04-01en_US
dc.identifier.issn1530-437Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSEN.2019.2959619en_US
dc.identifier.urihttp://hdl.handle.net/11536/154091-
dc.description.abstractThe aim of this study was to develop a novel dry electroencePhalography (EEG) sensor with a soft, pliable pad that conforms to the contours of the skin and skull providing a suitable surface contact area for collecting elec: trical potential signals and ensuring a reliable connection. In this study, based on our experience in developing flexible silver/silicon-based dry-contact sensors (SBDSs) for biognal measurements, we proposed a new, augmented weirle-embedded silicon-based dry-contact sensor (WSBDS) with a long lifespan and better performance in EEG measurements. The following two augmentation concepts were proposed in this design and implemented in fabrication: 1) the addition of a metal stud and 2) the embedding of copper wires into the fingers of an acicular SBDS. The forehead sensor is suitable for forehead EEG measurements, and the acicular sensor is designed for application to hair-covered sites, where it can overcome hair interference to achieve satisfactory scalp contact while maintaining low impedance at the skin-electrode interface. Finally, thisi faugm!nted WSBDS performed well in human EEG recording in a designed brain-computer interface (BCI) experiment and is easiblefor practical applications.en_US
dc.language.isoen_USen_US
dc.subjectElectroencephalography (EEG)en_US
dc.subjectdry sensoren_US
dc.subjectbrain-computer interfaceen_US
dc.subjectP300en_US
dc.titleAugmented Wire-Embedded Silicon-Based Dry-Contact Sensors for Electroencephalography Signal Measurementsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSEN.2019.2959619en_US
dc.identifier.journalIEEE SENSORS JOURNALen_US
dc.citation.volume20en_US
dc.citation.issue7en_US
dc.citation.spage3831en_US
dc.citation.epage3837en_US
dc.contributor.department腦科學研究中心zh_TW
dc.contributor.departmentBrain Research Centeren_US
dc.identifier.wosnumberWOS:000524351800047en_US
dc.citation.woscount0en_US
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