標題: Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface Layer
作者: Tsui, Bing-Yue
Liao, Hsiu-Hsien
Chen, Yi-Ju
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Germanium tin;leakage current;shallow junction
公開日期: 1-Mar-2020
摘要: In this article, the degradation mechanism of the Ge N+-P junctions with a thin GeSn surface layer is investigated, aiming for source/drain (S/D) application in emerging field-effect transistors. GeSn is a promising channel material with high carrier mobility, which can offer a better performance of the field-effect transistors. By performing thermal annealing at different temperatures, the reverse-biased leakage current increases apparently when annealing temperature exceeds 550 degrees C. X-ray diffraction (XRD) analysis indicates most Sn atoms escape from lattice sites while secondary-ion mass spectroscopy (SIMS) analysis indicates enhanced Sn diffusion in Ge bulk after ion implantation. Therefore, a degradation model considering Sn-defects interaction is proposed to explain the degradation of junction leakage current and possible solution is proposed.
URI: http://dx.doi.org/10.1109/TED.2019.2962267
http://hdl.handle.net/11536/154150
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2962267
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 67
Issue: 3
起始頁: 1120
結束頁: 1125
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