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dc.contributor.authorChang, Tsu-Chien_US
dc.contributor.authorHashemi, Ehsanen_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorBengtsson, Jorgenen_US
dc.contributor.authorGustaysson, Johanen_US
dc.contributor.authorHaglund, Asaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2020-05-05T00:02:21Z-
dc.date.available2020-05-05T00:02:21Z-
dc.date.issued2020-04-15en_US
dc.identifier.issn2330-4022en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsphotonics.9b01636en_US
dc.identifier.urihttp://hdl.handle.net/11536/154155-
dc.description.abstractWe demonstrate the first electrically injected GaNbased vertical-cavity surface-emitting lasers (VCSELs) with a TiO2 high-index-contrast grating (HCG) as the top mirror. Replacing the top distributed Bragg reflector (DBR) with an HCG offers substantial thickness reduction, polarization-pinning, and setting of the resonance wavelength by the grating parameters. Conventional HCGs are usually suspended in the low refractive index material, such as air, in order to create the largest refractive index contrast. However, the mechanical stability of such structures can be questioned and creating free-hanging GaN-membrane on top of GaN is problematic. We have therefore fabricated TiO2-HCGs resting directly on GaN without an air-gap. No DBR layers are used below the HCG to boost the reflectivity. A VCSEL with an aperture diameter of 10 mu m shows a threshold current of 25 mA under pulsed operation at room temperature. The lasing modes locate around 400 nm and are transversely electrically -polarized with a line width of 0.5 nm. The full-width half-maximum beam divergence is 10 degrees. This demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as postgrowth setting of the resonance wavelength.en_US
dc.language.isoen_USen_US
dc.subjecthigh-index-contrast gratingen_US
dc.subjectvertical-cavity surface-emitting laseren_US
dc.subjectmicrocavityen_US
dc.subjectelectrically driven deviceen_US
dc.subjectGaNen_US
dc.subjectpolarization selectivityen_US
dc.subjectTiO2en_US
dc.subjectVCSELen_US
dc.subjectHCGen_US
dc.titleElectrically Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers with TiO2 High-Index-Contrast Grating Reflectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsphotonics.9b01636en_US
dc.identifier.journalACS PHOTONICSen_US
dc.citation.volume7en_US
dc.citation.issue4en_US
dc.citation.spage861en_US
dc.citation.epage866en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000526355400002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles