Title: In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor
Authors: Cheng, Long
Zheng, Hao-Xuan
Li, Yi
Chang, Ting-Chang
Sze, Simon M.
Miao, Xiangshui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Digital comparator;in-memory computing;memristor;multivalued
Issue Date: 1-Mar-2020
Abstract: In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance.
URI: http://dx.doi.org/10.1109/TED.2020.2967401
http://hdl.handle.net/11536/154166
ISSN: 0018-9383
DOI: 10.1109/TED.2020.2967401
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 67
Issue: 3
Begin Page: 1293
End Page: 1296
Appears in Collections:Articles