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dc.contributor.authorCheng, Longen_US
dc.contributor.authorZheng, Hao-Xuanen_US
dc.contributor.authorLi, Yien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorMiao, Xiangshuien_US
dc.date.accessioned2020-05-05T00:02:22Z-
dc.date.available2020-05-05T00:02:22Z-
dc.date.issued2020-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2020.2967401en_US
dc.identifier.urihttp://hdl.handle.net/11536/154166-
dc.description.abstractIn-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance.en_US
dc.language.isoen_USen_US
dc.subjectDigital comparatoren_US
dc.subjectin-memory computingen_US
dc.subjectmemristoren_US
dc.subjectmultivalueden_US
dc.titleIn-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristoren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2020.2967401en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume67en_US
dc.citation.issue3en_US
dc.citation.spage1293en_US
dc.citation.epage1296en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000519593800079en_US
dc.citation.woscount0en_US
Appears in Collections:Articles