Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Majumdar, Swatilekha | en_US |
dc.contributor.author | Chen, Ying | en_US |
dc.contributor.author | Hudec, Boris | en_US |
dc.contributor.author | Hou, Tuo-Hung | en_US |
dc.contributor.author | Suri, Manan | en_US |
dc.date.accessioned | 2020-05-05T00:02:22Z | - |
dc.date.available | 2020-05-05T00:02:22Z | - |
dc.date.issued | 2020-03-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2020.2964113 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/154168 | - |
dc.description.abstract | In this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO sigma /Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Compact model | en_US |
dc.subject | non-filamentary oxide-based random access memory (OxRAM) | en_US |
dc.subject | OxRAM | en_US |
dc.subject | resistive switching | en_US |
dc.title | Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2020.2964113 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 67 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 1348 | en_US |
dc.citation.epage | 1352 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000519593800088 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |