1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorMajumdar, Swatilekhaen_US
dc.contributor.authorChen, Yingen_US
dc.contributor.authorHudec, Borisen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorSuri, Mananen_US
dc.date.accessioned2020-05-05T00:02:22Z-
dc.date.available2020-05-05T00:02:22Z-
dc.date.issued2020-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2020.2964113en_US
dc.identifier.urihttp://hdl.handle.net/11536/154168-
dc.description.abstractIn this brief, we present a semi-empirical RC-circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfOx/TiON/TiN, and Al/AlO sigma /Ta2O5-x/TaOy/W. Through this model, simulation versus experimental error of less than 10% is achieved.en_US
dc.language.isoen_USen_US
dc.subjectCompact modelen_US
dc.subjectnon-filamentary oxide-based random access memory (OxRAM)en_US
dc.subjectOxRAMen_US
dc.subjectresistive switchingen_US
dc.titleSemi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2020.2964113en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume67en_US
dc.citation.issue3en_US
dc.citation.spage1348en_US
dc.citation.epage1352en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000519593800088en_US
dc.citation.woscount0en_US
顯示於類別：期刊論文


相關內容
Loading...