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dc.contributor.authorChang, J. -R.en_US
dc.contributor.authorChang, S. -P.en_US
dc.contributor.authorChen, Y. -C.en_US
dc.contributor.authorSou, K. -P.en_US
dc.contributor.authorCheng, Y. -J.en_US
dc.contributor.authorKuo, H. -C.en_US
dc.contributor.authorChang, C. -Y.en_US
dc.date.accessioned2014-12-08T15:21:41Z-
dc.date.available2014-12-08T15:21:41Z-
dc.date.issued2012en_US
dc.identifier.isbn978-0-81948-921-0en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/15416-
dc.identifier.urihttp://dx.doi.org/10.1117/12.907749en_US
dc.description.abstractAn electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications.en_US
dc.language.isoen_USen_US
dc.subjectsemipolaren_US
dc.subjectGaNen_US
dc.subjectLEDsen_US
dc.titleElectrically driven nanoarrow array green LEDen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.907749en_US
dc.identifier.journalLIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIen_US
dc.citation.volume8278en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000301055700016-
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