Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Chun-han | en_US |
dc.contributor.author | Yen, Wan-ting | en_US |
dc.contributor.author | Tsai, Yi-fen | en_US |
dc.contributor.author | Wu, Hsin-jay | en_US |
dc.date.accessioned | 2020-05-05T00:02:23Z | - |
dc.date.available | 2020-05-05T00:02:23Z | - |
dc.date.issued | 2020-02-01 | en_US |
dc.identifier.issn | 2574-0962 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsaem.9b02500 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/154189 | - |
dc.description.abstract | We revisit the well-established Bi2Te3 via phase diagram engineering. Along with a phase diagram in hand, it is realized that the solubility of Ga in Bi2Te3 is coincident with the p-n transition zone in Ga-Bi2Te3 alloys. The best-performing n-type (Bi2Te3)(0.93)(Ga2Te5)(0.07) possesses a peak zT similar to 1.5 at 300 K, which is attributed to the reduced kappa similar to 1.8 W m(-1) K-1 and the low-lying rho. The p-type Bi1.99Ga0.01Te3 also exhibits a peak zT of 1.2 at 300 K In other words, the addition of Ga leads to high-zT p-type or n-type bismuth-tellurides, which simplifies the conventional synthesis route that usually involves different dopants. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | thermoelectric materials | en_US |
dc.subject | Bi2Te3 | en_US |
dc.subject | phase diagram engineering | en_US |
dc.subject | figure of merit (zT) | en_US |
dc.subject | p-n transition | en_US |
dc.title | Unravelling p-n Conduction Transition in High Thermoelectric Figure of Merit Gallium-Doped Bi2Te3 via Phase Diagram Engineering | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/acsaem.9b02500 | en_US |
dc.identifier.journal | ACS APPLIED ENERGY MATERIALS | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 1311 | en_US |
dc.citation.epage | 1318 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000516665300010 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |