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dc.contributor.authorLin, Chun-hanen_US
dc.contributor.authorYen, Wan-tingen_US
dc.contributor.authorTsai, Yi-fenen_US
dc.contributor.authorWu, Hsin-jayen_US
dc.date.accessioned2020-05-05T00:02:23Z-
dc.date.available2020-05-05T00:02:23Z-
dc.date.issued2020-02-01en_US
dc.identifier.issn2574-0962en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsaem.9b02500en_US
dc.identifier.urihttp://hdl.handle.net/11536/154189-
dc.description.abstractWe revisit the well-established Bi2Te3 via phase diagram engineering. Along with a phase diagram in hand, it is realized that the solubility of Ga in Bi2Te3 is coincident with the p-n transition zone in Ga-Bi2Te3 alloys. The best-performing n-type (Bi2Te3)(0.93)(Ga2Te5)(0.07) possesses a peak zT similar to 1.5 at 300 K, which is attributed to the reduced kappa similar to 1.8 W m(-1) K-1 and the low-lying rho. The p-type Bi1.99Ga0.01Te3 also exhibits a peak zT of 1.2 at 300 K In other words, the addition of Ga leads to high-zT p-type or n-type bismuth-tellurides, which simplifies the conventional synthesis route that usually involves different dopants.en_US
dc.language.isoen_USen_US
dc.subjectthermoelectric materialsen_US
dc.subjectBi2Te3en_US
dc.subjectphase diagram engineeringen_US
dc.subjectfigure of merit (zT)en_US
dc.subjectp-n transitionen_US
dc.titleUnravelling p-n Conduction Transition in High Thermoelectric Figure of Merit Gallium-Doped Bi2Te3 via Phase Diagram Engineeringen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsaem.9b02500en_US
dc.identifier.journalACS APPLIED ENERGY MATERIALSen_US
dc.citation.volume3en_US
dc.citation.issue2en_US
dc.citation.spage1311en_US
dc.citation.epage1318en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000516665300010en_US
dc.citation.woscount0en_US
Appears in Collections:Articles