標題: | GaN-based microcavity polariton light emitting diodes |
作者: | Lu, Tien-Chang Lai, Ying-Yu Huang, Si-Wei Chen, Jun-Rong Wu, Yung-Chi Lin, Shiang-Chi Wang, Shing-Chung Yamamoto, Yoshihisa 光電工程學系 Department of Photonics |
關鍵字: | GaN;exciton-polariton;light emitting diode (LED);Rabi splitting |
公開日期: | 2012 |
摘要: | Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons. |
URI: | http://hdl.handle.net/11536/15419 http://dx.doi.org/10.1117/12.908343 |
ISBN: | 978-0-81948-921-0 |
ISSN: | 0277-786X |
DOI: | 10.1117/12.908343 |
期刊: | LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI |
Volume: | 8278 |
顯示於類別: | 會議論文 |