GaN-based microcavity polariton light emitting diodes

doi:10.1117/12.908343

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DC 欄位	值	語言
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Lai, Ying-Yu	en_US
dc.contributor.author	Huang, Si-Wei	en_US
dc.contributor.author	Chen, Jun-Rong	en_US
dc.contributor.author	Wu, Yung-Chi	en_US
dc.contributor.author	Lin, Shiang-Chi	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.contributor.author	Yamamoto, Yoshihisa	en_US
dc.date.accessioned	2014-12-08T15:21:42Z	-
dc.date.available	2014-12-08T15:21:42Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-0-81948-921-0	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15419	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.908343	en_US
dc.description.abstract	Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaN	en_US
dc.subject	exciton-polariton	en_US
dc.subject	light emitting diode (LED)	en_US
dc.subject	Rabi splitting	en_US
dc.title	GaN-based microcavity polariton light emitting diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.908343	en_US
dc.identifier.journal	LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVI	en_US
dc.citation.volume	8278	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000301055700010	-
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