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dc.contributor.authorWu, Tian-Lien_US
dc.contributor.authorTang, Shun-Weien_US
dc.contributor.authorJiang, Hong-Jiaen_US
dc.date.accessioned2020-05-05T00:02:24Z-
dc.date.available2020-05-05T00:02:24Z-
dc.date.issued2020-02-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/mi11020163en_US
dc.identifier.urihttp://hdl.handle.net/11536/154201-
dc.description.abstractIn this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (g(m))-gate voltage (V-G) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive V-G. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (V-TH) toward an enhancement-mode characteristic.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectmetal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)en_US
dc.subjectrecessed gateen_US
dc.subjectdouble barrieren_US
dc.titleInvestigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristicen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/mi11020163en_US
dc.identifier.journalMICROMACHINESen_US
dc.citation.volume11en_US
dc.citation.issue2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000520181500052en_US
dc.citation.woscount0en_US
Appears in Collections:Articles